These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...
Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...
Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
The first device in AOS’ αMOS E2 high-voltage Super Junction MOSFET platform is the AOTL037V60DE2, a 600-V N-channel MOSFET. It offers high efficiency and power density for mid- to high-power ...
Taiwan-based power MOSFET and diode suppliers, primarily involved in the supply chain for notebooks and other PCs, anticipate demand will recover around mid-2024. Save my User ID and Password Some ...
In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...
Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...
Radiation dosimetry is pivotal in ensuring both patient safety during radiotherapy and efficient monitoring in industrial and environmental settings. Metal Oxide Semiconductor Field-Effect Transistors ...
In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power ...
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