Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to Institute of Science Tokyo. It “demonstrates strong electric polarisation ...

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

A new study outlines progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications, including high-performance computing. Scientists and ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

Dublin, Jan. 30, 2026 (GLOBE NEWSWIRE) -- The "Ferroelectric Memory-Display Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report provides comprehensive insights into the ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...